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IPP65R190C6XKSA1

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Shenzhen Century Tongxin Electronics Co., Ltd

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IPP65R190C6XKSA1

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 20.2 A

Mounting Style : Through Hole

Tradename : CoolMOS

Minimum Operating Temperature : - 55 C

Package / Case : TO-220-3

Maximum Operating Temperature : + 150 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 650 V

Packaging : Tube

Vgs th - Gate-Source Threshold Voltage : 2.5 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 170 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 20 V

Qg - Gate Charge : 73 nC

Manufacturer : Infineon Technologies

Description : MOSFET N-Ch 700V 20.2A TO220-3

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The IPP65R190C6XKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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