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DMN2400UFDQ-7

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DMN2400UFDQ-7

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 900 mA

Mounting Style : SMD/SMT

Minimum Operating Temperature : - 55 C

Package / Case : U-DFN1212-3

Maximum Operating Temperature : + 150 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 20 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 450 mV

Product Category : MOSFET

Rds On - Drain-Source Resistance : 350 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 12 V

Qg - Gate Charge : 500 pC

Manufacturer : Diodes Incorporated

Description : MOSFET 20V N-Ch Enh FET VL Gate 1.0V

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The DMN2400UFDQ-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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