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BSP135 E6327

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Shenzhen Century Tongxin Electronics Co., Ltd

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BSP135 E6327

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 120mA (Ta)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 5V

Manufacturer : Infineon Technologies

Minimum Quantity : 1000

Drive Voltage (Max Rds On, Min Rds On) : 0V, 10V

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : Depletion Mode

Series : SIPMOS®

Input Capacitance (Ciss) (Max) @ Vds : 146pF @ 25V

Supplier Device Package : PG-SOT223-4

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 45 Ohm @ 120mA, 10V

Power Dissipation (Max) : 1.8W (Ta)

Package / Case : TO-261-4, TO-261AA

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 1V @ 94µA

Drain to Source Voltage (Vdss) : 600V

Description : MOSFET N-CH 600V 120MA SOT-223

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The BSP135 E6327,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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