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Transistor Polarity : N-Channel
Technology : Si
Product Category : MOSFET
Mounting Style : Through Hole
Package / Case : TO-262-3
Vds - Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Id - Continuous Drain Current : 180 A
Rds On - Drain-Source Resistance : 3.9 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 20 V
Qg - Gate Charge : 143 nC
Manufacturer : Infineon Technologies
Description : MOSFET MOSFT 100V 180A 4.7mOhm 143nC
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