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IPW60R099P6XKSA1

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Shenzhen Century Tongxin Electronics Co., Ltd

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IPW60R099P6XKSA1

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 37.9A (Tc)

FET Type : N-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 1

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : -

Series : CoolMOS™ P6

Input Capacitance (Ciss) (Max) @ Vds : 3330pF @ 100V

Supplier Device Package : PG-TO247-3

Part Status : Active

Packaging : Tube

Rds On (Max) @ Id, Vgs : 99 mOhm @ 14.5A, 10V

Power Dissipation (Max) : 278W (Tc)

Package / Case : TO-247-3

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4.5V @ 1.21mA

Drain to Source Voltage (Vdss) : 600V

Description : MOSFET N-CH 600V TO247-3

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The IPW60R099P6XKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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