Sign In | Join Free | My carsrow.com
China Shenzhen Century Tongxin Electronics Co., Ltd logo
Shenzhen Century Tongxin Electronics Co., Ltd
People-oriented, professional services
Active Member

2 Years

Home > MOSFET >

SQJ850EP-T1_GE3

Product Categories
Shenzhen Century Tongxin Electronics Co., Ltd
Contact Now

SQJ850EP-T1_GE3

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 24 A

Mounting Style : SMD/SMT

Tradename : TrenchFET

Minimum Operating Temperature : - 55 C

Package / Case : PowerPAK-SO-8L-4

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 60 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 1.5 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 0.019 Ohms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : +/- 20 V

Qg - Gate Charge : 30 nC

Manufacturer : Vishay Semiconductors

Description : MOSFET 60V 24A 45W AEC-Q101 Qualified

Contact Now

The SQJ850EP-T1_GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
 SQJ850EP-T1_GE3 Manufactures

SQJ850EP-T1_GE3 Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Shenzhen Century Tongxin Electronics Co., Ltd
*Subject:
*Message:
Characters Remaining: (0/3000)