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DMN61D8LVT-13

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DMN61D8LVT-13

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 630 mA, 630 mA

Mounting Style : SMD/SMT

Minimum Operating Temperature : - 55 C

Package / Case : TSOT-26-6

Maximum Operating Temperature : + 150 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 60 V, 60 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 1.3 V, 1.3 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 1.1 Ohms, 1.1 Ohms

Number of Channels : 2 Channel

Vgs - Gate-Source Voltage : 12 V, 12 V

Qg - Gate Charge : 740 pC, 740 pC

Manufacturer : Diodes Incorporated

Description : MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA

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The DMN61D8LVT-13,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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