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Transistor Polarity : P-Channel
Technology : Si
Product Category : MOSFET
Mounting Style : Through Hole
Package / Case : TO-251-3
Vds - Drain-Source Breakdown Voltage : - 100 V
Packaging : Tube
Id - Continuous Drain Current : - 13 A
Rds On - Drain-Source Resistance : 205 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 20 V
Qg - Gate Charge : 38.7 nC
Manufacturer : Infineon Technologies
Description : MOSFET MOSFT P-Ch -100V -13A 205mOhm 38.7nC
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