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EMZ1DXV6T1G

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Shenzhen Century Tongxin Electronics Co., Ltd

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EMZ1DXV6T1G

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays

Current - Collector (Ic) (Max) : 100mA

Product Status : Obsolete

Transistor Type : NPN, PNP

Mounting Type : Surface Mount

Frequency - Transition : 180MHz, 140MHz

Package : Tape & Reel (TR)

Series : -

Vce Saturation (Max) @ Ib, Ic : 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) : 60V

Supplier Device Package : SOT-563

Mfr : onsemi

Current - Collector Cutoff (Max) : 500nA (ICBO)

Power - Max : 500mW

Package / Case : SOT-563, SOT-666

Operating Temperature : -55°C ~ 150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 6V

Base Product Number : EMZ1

Description : TRANS NPN/PNP 60V 0.1A SOT563

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Bipolar (BJT) Transistor Array NPN, PNP 60V 100mA 180MHz, 140MHz 500mW Surface Mount SOT-563

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