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ULN2803APG,CN

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ULN2803APG,CN

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays

Current - Collector (Ic) (Max) : 500mA

Product Status : Obsolete

Transistor Type : 8 NPN Darlington

Mounting Type : Through Hole

Frequency - Transition : -

Package : Tube

Series : -

Vce Saturation (Max) @ Ib, Ic : 1.6V @ 500µA, 350mA

Voltage - Collector Emitter Breakdown (Max) : 50V

Supplier Device Package : 18-DIP

Mfr : Toshiba Semiconductor and Storage

Current - Collector Cutoff (Max) : -

Power - Max : 1.47W

Package / Case : 18-DIP (0.300", 7.62mm)

Operating Temperature : -40°C ~ 85°C (TA)

DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 350mA, 2V

Base Product Number : ULN2803

Description : TRANS 8NPN DARL 50V 0.5A 18DIP

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Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP
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