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IRGP4062-EPBF

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Shenzhen Century Tongxin Electronics Co., Ltd

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IRGP4062-EPBF

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 48 A

Pd - Power Dissipation : 250 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-247-3

Packaging : Tube

Maximum Gate Emitter Voltage : 20 V

Collector-Emitter Saturation Voltage : 2.04 V

Manufacturer : IR / Infineon

Description : IGBT Transistors IR IGBT 600V 600V 24A TO-247AD

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The IRGP4062-EPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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