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IXGH48N60A3D1

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Shenzhen Century Tongxin Electronics Co., Ltd

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IXGH48N60A3D1

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Pd - Power Dissipation : 300 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-247AD-3

Maximum Operating Temperature : + 150 C

Packaging : Tube

Maximum Gate Emitter Voltage : +/- 20 V

Collector-Emitter Saturation Voltage : 1.18 V

Manufacturer : IXYS

Description : IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A

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The IXGH48N60A3D1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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