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Voltage - Collector Emitter Breakdown (Max) : 5.3V
Product Category : RF Bipolar Transistors
Gain : 12.5dB
Transistor Type : NPN
Minimum Quantity : 3000
Supplier Device Package : UFM
Noise Figure (dB Typ @ f) : 1.45dB @ 1GHz
Part Status : Active
Current - Collector (Ic) (Max) : 100mA
Power - Max : 900mW
Packaging : Tape & Reel (TR)
Frequency - Transition : 11.2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Operating Temperature : 150°C (TJ)
Package / Case : 3-SMD, Flat Leads
Mounting Type : Surface Mount
Series : -
Manufacturer : Toshiba Semiconductor
Description : RF SIGE HETEROJUNCTION BIPOLAR N
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