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NSM21356DW6T1G

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Shenzhen Century Tongxin Electronics Co., Ltd

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NSM21356DW6T1G

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased

Current - Collector (Ic) (Max) : 100mA

Product Status : Obsolete

Transistor Type : 1 NPN Pre-Biased, 1 PNP

Frequency - Transition : -

Mounting Type : Surface Mount

Package : Tape & Reel (TR)

Series : -

Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) : 50V, 65V

Supplier Device Package : SC-88/SC70-6/SOT-363

Resistor - Base (R1) : 47kOhms

Mfr : onsemi

Resistor - Emitter Base (R2) : 47kOhms

Current - Collector Cutoff (Max) : 500nA

Power - Max : 230mW

Package / Case : 6-TSSOP, SC-88, SOT-363

DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V / 220 @ 2mA, 5V

Base Product Number : NSM213

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Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 65V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363

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